SEMICONDUCTOR DEVICE MANUFACTURING METHOD Russian patent published in 2020 - IPC H01L27/01 

FIELD: electricity.

SUBSTANCE: invention can be used to manufacture a field-effect transistor with low leakage currents. Essence of the invention is that the semiconductor device manufacturing method involves formation of a thin layer of oxide and a polysilicon layer on p-type silicon plates, wherein polysilicon is formed at a deposition rate of 8.5 nm/s at a gas flow rate of argon carrier of 2.7 cm/s and a silane flow rate of SiN₄ of 1.0 % of the carrier gas flow rate at a substrate temperature of 800 °C and subsequent implantation with nitrogen ions with energy of 12.5 keV and dose of 1*1017cm^-2 at substrate temperature of 100 °C and annealing in hydrogen atmosphere for 15 minutes at temperature of 350 °C.

EFFECT: possibility of reducing leakage currents, ensuring processability, improving parameters of instruments, improving quality and increasing percentage yield.

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