SEMICONDUCTOR DEVICE MANUFACTURING METHOD Russian patent published in 2020 - IPC H01L21/263 

FIELD: electrical engineering.

SUBSTANCE: invention relates to production of semiconductor devices, particularly to production of devices with silicon carbide layer with low leakage currents. In method of semiconductor device manufacturing on silicon plates after formation of drain / source areas and deposition of silicon carbide layer and ferroelectric material, structure is exposed to electrons with energy of 6 MeV, dose of 2⋅10¹⁸–3⋅10¹⁸ cm^-2, with subsequent thermal treatment in hydrogen atmosphere at temperature of 970 °C for 30 minutes.

EFFECT: invention provides reduction of leakage currents, improved parameters of structures, high quality and yield.

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