METHOD FOR MAKING SEMICONDUCTOR DEVICE Russian patent published in 2018 - IPC H01L21/265 

FIELD: instrument engineering.

SUBSTANCE: invention relates to the field of semiconductor devices manufacturing technology, in particular to the technology of manufacturing a field effect transistor with reduced leakage currents. Above method consists in the following: GaAs substrates serve as the starting material. Hidden p⁺ layer was formed by introducing the ions of beryllium Be into the GaAs substrate in two stages: the first stage with an energy of 150 keV, and a dose of 2*10¹⁵ cm^-2, and the second stage with an energy of 350 keV, a dose of 3*10¹⁵ cm^-2 and followed by annealing at a temperature of 800°C for 20 min in a hydrogen atmosphere H₂. To reduce the parasitic resistance of p-n junctions, ion implantation of Be was performed through a two-layer Mo-Au mask, covering areas for the formation of contact areas of the source and drain. Then the active n-layer was plated and a drain, source and channel areas of the semiconductor device was formed on it, using the standard technology. Said hidden p+-layer performed the shutter functions.

EFFECT: invention provides a reduction in leakage currents, an increase in manufacturability and a percentage yield.

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