FIELD: physics, measurement equipment.
SUBSTANCE: invention refers to the field of scanning electron microscopy. The invention uses the principle of photogrammetric processing of images obtained by means of a scanning electron microscope at various angles of inclination of the investigated object. The essence of invention: the studied silicon structure is exposed to pre-plasma treatment using a high-frequency discharge of low pressure, the discharge power and treatment duration are established to be sufficient for morphological features of nanometer scale occurence on the object surface and their imaging in the scanning electron microscope.
EFFECT: invention improves the accuracy of three-dimensional reconstruction results.
1 dwg
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