SEMICONDUCTOR DEVICE MANUFACTURING METHOD Russian patent published in 2019 - IPC H01L21/265 

FIELD: electrical engineering.

SUBSTANCE: invention relates to the field of semiconductor devices manufacturing technology, in particular to the field-effect transistor manufacturing technology with increased insulating areas breakdown voltage value. Invention provides high values of breakdown voltage of insulating areas, improved manufacturability, improved parameters of instruments, improved quality and increased percentage yield. In the method of making a semiconductor device on a n-type silicon substrate, a p-type pocket is formed by implanting magnesium ions with energy of 150 keV, with dose of 1*10¹⁴ cm^-2, followed by heat treatment at temperature 700–750 °C for 5–15 minutes in hydrogen atmosphere.

EFFECT: device structure, electrodes of drain, source and gate are formed according to standard technology.

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