METHOD FOR MAKING SEMICONDUCTOR DEVICE Russian patent published in 2018 - IPC H01L21/265 

FIELD: electrical engineering.

SUBSTANCE: invention relates to the field of semiconductor manufacturing technology, in particular to the technology of manufacturing a field effect transistor with a reduced defect density. Method for manufacturing a semiconductor device is proposed, comprising forming plain polysilicon over a layer of silicon oxide at a rate of 10 nm/min at a temperature of 650 °C, with a silane consumption of 10 cm³/min and hydrogen 22 l/min, thickness 400 nm and carrying out ion implantation of nitrogen with an energy of 1,215 keV, a dose of 5*1,016–2*10¹⁷ cm^-2 at a substrate temperature of 100 °C, followed by heat treatment at 450 °C for 30 minutes in the formation gas. Technology of the method consists in: growing a layer of silicon oxide on the plates of p-type silicon of conductivity with a specific resistance of 4.5 ohm*cm, the orientation (100), growing plain polysilicon layer on top of it using pyrolysis at a rate of 10 nm/min at 650 °C, with a silane consumption of 10 cm³/min and hydrogen 22 l/min, thickness 400 nm, followed by ion implantation of nitrogen with an energy of 12–15 keV, a dose of 5*10¹⁶–2*10¹⁷ cm^-2, at a substrate temperature of 100 °C. Carry out heat treatment at a temperature of 450 °C for 30 minutes in the formation gas and then the manufacture of devices using standard technology.

EFFECT: reduction in defect density, ensuring processability, improving instrument parameters, improving quality and increasing the yield percentage.

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