FIELD: physics.
SUBSTANCE: electronic device ribs are formed by the epitaxial growth of the first material layer over the substrate surface at the gap bottom formed between the side walls of the shallow trench isolation (STI) areas. The trench height may be, at least, 1.5 of its width size, and the first layer may fill less than the trench height. Then, the second material layer may be epitaxially grown on the first trench layer and over the upper surfaces of the STI areas. The second layer may have the second width extending over the tench and over the upper surface portions of the STI areas. The second layer may then be structured and etched to form a pair of the electronic device ribs over the upper surface portions of the STI areas, proximally to the trench.
EFFECT: invention makes it possible to eliminate crystal defects in the ribs, because of the difference between the constants of the crystal lattices at the boundary of the layer transition.
20 cl, 10 dwg
