MANUFACTURING OF DEFECTS-FREE DEVICE BASED ON A RIB IN THE AREA OF TRANSVERSE EPITAXIAL GROWTH Russian patent published in 2020 - IPC H01L21/336 H01L29/78 

FIELD: electronic equipment.

SUBSTANCE: inventions can be used in electronic devices on a substrate, for example, in transistors, integrated circuits, etc. Ribs of the electronic device can be formed by epitaxial growth of the first layer of material on top of the substrate surface on the bottom of the slot, formed between side walls of narrow-slit insulation (STI) areas. Slot height can make at least 1.5 of its width and first layer can fill less than slot height. Then second layer of material can be epitaxially grown on first layer of slot and above upper surfaces of STI. Second layer can have a second width extending over the slot and above the sections of the upper surfaces of the STI regions. Second layer can then be structured and can be etched to form a pair of ribs of the electronic device over sections of upper surfaces of the STI regions, proximally the slits.

EFFECT: inventions make it possible to exclude defects of crystals in ribs due to difference between constants of crystalline lattices at border of transition of layers.

41 cl, 10 dwg