FIELD: physics.
SUBSTANCE: base structure for the material layer intended for selective processing according to the high resolution pattern and the reception of the electronically sensitive masking layer for pattern determination comprises a layering of the substrate and an intermediate layer of the porous material with a density, at least, half that of the density of the same non-porous material, this material having an atomic mass of less than 32. The method of electronic lithography includes the formation of a base structure, for a layer of material intended for selective processing, according to a high resolution pattern, and then a processing operation by implanting and/or etching a layer of material intended for selective processing.
EFFECT: reducing the effect of backscattered electrons on high resolution images obtained by lithography.
11 cl, 8 dwg
Title | Year | Author | Number |
---|---|---|---|
METHOD OF DRY ELECTRON-BEAM LITHOGRAPHY | 2016 |
|
RU2629135C1 |
METHOD OF SCREEN SCANNING SYNCHROTRON X-RAY LITHOGRAPHY | 2007 |
|
RU2344454C1 |
MASK FOR NEAR-FIELD LITHOGRAPHY AND ITS MANUFACTURE | 2011 |
|
RU2544280C2 |
METHOD OF SCREEN-X-RAY LITHOGRAPHY | 2007 |
|
RU2344453C1 |
CORRECTION OF PROXIMITY EFFECT IN SYSTEM FOR LITHOGRAPHY BY BEAMS OF CHARGED PARTICLES | 2015 |
|
RU2691955C2 |
ELECTRON BEAM LITHOGRAPHY | 2011 |
|
RU2462784C1 |
X-RAY MASK | 2022 |
|
RU2785012C1 |
METHOD OF CORRECTING EXPOSURE IN CATHODE-RAY LITHOGRAPHY | 0 |
|
SU1145847A1 |
METHOD OF RESIST SUBSTRATE MANUFACTURING | 2004 |
|
RU2334261C2 |
METHOD OF FORMING MASKING IMAGE IN POSITIVE ELECTRON RESISTS | 2011 |
|
RU2478226C1 |
Authors
Dates
2017-10-06—Published
2013-08-02—Filed