FIELD: physics.
SUBSTANCE: X-ray mask comprises a bearing membrane with a metal X-ray-absorbing topological image made on its surface and the substrate to be processed locked in its holder and furnished with an X-ray resistor layer applied on its surface are arranged on the path of synchrotron radiation, the X-ray mask being located closer to the radiation source. Note that the synchrotron accumulator magnetic structure control is executed by a special computer program periodically changing the corner of orbit inclination relative to median plane that allows scanning the SR beam propagating over the lithographic channel and over the X-ray mask working area. Mind that the amplitudes of deflectors magnetic fields defining the orbit of electrons on the site of the accumulator between the deflectors are set depending upon the distances between the said deflectors and the point whereat circulating electron orbit intersects the axis at a given period of operating lithographic channel, the aforesaid setting being made so as to allow the bunch of electrons to pass through the aforesaid point during the entire exposure period and to vary its inclination angle relative to the aforesaid median plane.
EFFECT: higher quality of resistive mask formed by means of screen synchrotron X-ray lithography by reducing half-shade blurring along vertical of hidden topological image.
5 dwg
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Authors
Dates
2009-01-20—Published
2007-06-13—Filed