METHOD OF PLASMA-STIMULATED ATOMIC-LAYER DEPOSITION OF INSULATING DIELECTRIC COATINGS ON HETEROSTRUCTURES OF NITRID-GALLIUM SEMICONDUCTOR DEVICES Russian patent published in 2017 - IPC H01L21/31 

FIELD: technological processes.

SUBSTANCE: surface of heterostructure is pretreated in an inductively coupled low-pressure hydrogen plasma with a reduced power input in the discharge zone away from a plasma source, in which low concentration of ions is provided, no more than 10⁹ cm^-3 and simultaneously a high concentration of chemically active radicals, at least 10¹³cm^-3 stimulating surface reactions of passivation of broken chemical bonds and removal of natural oxide adsorbed from the atmosphere of moisture and other surface adsorbates to ensure subsequent atomic-layer growth of the film on the surface with a minimum amount of surface states at the film-substrate interface.

EFFECT: improving the electrical and frequency characteristics of nitride-gallium semiconductor devices.

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