HETEROSTRUCTURAL FIELD-EFFEC TRANSISTOR BASED ON GALLIUM NITRIDE WITH IMPROVED TEMPERATURE STABILITY OF CURRENT-VOLTAGE CHARACTERISTICS Russian patent published in 2018 - IPC H01L29/772 

FIELD: radio engineering; electronics.

SUBSTANCE: invention relates to radio engineering and electronics. In a heterostructured field-effect transistor based on gallium nitride with improved stability of the current-voltage characteristic, including a substrate of silicon carbide, channel layer, buffer layer, AlGaN-based barrier layer, silicon nitride-based passivation layer, electrodes of drain, gate, source, buffer layer made on the basis of gallium nitride, after reducing the thickness of the substrate to 100 microns, a layer with a high thermal conductivity is being applied, layer is modulated according to the depth of the substrate in the shutter vicinity. Depth of modulation of the substrate in the shutter vicinity can be 50 mcm.

EFFECT: invention provides improved heat removing from the gate region and reduced temperature of the channel of the field-effect transistor based on heterostructures of the AlGaN/GaN type, which leads to improved temperature stability of its current-voltage characteristics.

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