P-I-N-DIODE NEUTRON RADIATION CONVERTER Russian patent published in 2011 - IPC H01L31/117 G01T1/24 

FIELD: physics.

SUBSTANCE: invention relates to semiconductor devices for converting radiation effects, mainly neutron radiation, into an electrical signal, measurement of which enables to determine the radiation level or accumulated radiation dose. A P-I-N-diode neutron radiation converter - semiconductor device for converting radiation effects, mainly neutron radiation, into an electrical signal has an n-type high-resistivity silicon substrate and several p-type injection electrodes. P-type emitters of the p-i-n-diode neutron radiation converter are in form of a matrix on the front side of the substrate and the length of the base varies with the silicon etching depth on the reverse side of the substrate in the region between the emitter and the contact to the n-type region.

EFFECT: invention provides a real article with a wide range of working radiation doses due to integration of silicon p-i-n-diodes in form of a matrix on a single substrate with variable length of the base region and dimensions of electrode.

6 cl, 12 dwg