METHOD FOR CONTROLING FRICTION IN FRICTION PAIRS Russian patent published in 2017 - IPC C23C26/00 H01L29/12 

FIELD: electricity.

SUBSTANCE: method for controlling friction in elements of friction pair includes pre-applying the coating from dichalcogenide of transition metal on the elements of the friction pair, and dichalcogenide of transition metal is applied on one element doped with impurity providing the n-type semiconductor, and dichalcogenide of transition metal doped with impurity providing the p-type semiconductor - on another one. The dopant is used in a concentration of 1 to 10 atoms of impurities on 10⁷ molecules of dichalcogenide of transition metal, then constant current with variable potential difference is fed on the elements of the friction pair. A positive potential is fed to the element with a coating of dichalcogenide of transition metal doped with impurity providing the n-type semiconductor and a negative potential is fed to the element with a coating of dichalcogenide of transition metal doped with impurity providing the p-type semiconductor, wherein voltage is changed from 0 to the breakdown voltage of the formed elements of the friction pair of the p-n junction.

EFFECT: increasing the effectiveness of friction control in friction pairs.

10 cl, 1 ex