METHOD OF MAKING SEMICONDUCTOR DEVICE Russian patent published in 2018 - IPC H01L21/336 H01L21/268 

FIELD: electrical engineering.

SUBSTANCE: invention relates to the field of semiconductor device manufacturing technology, in particular to the technology of manufacturing devices with reduced contact resistance. Technology of the method for manufacturing a semiconductor device is as follows: for the formation of contact in the initial substrate of gallium arsenide of n-type conductivity with orientation (100), an ionic introduction of tellurium with an energy of 50 keV is carried out, with a dose of 1*10¹⁶ cm^-2, followed by laser annealing at a pulse duration of 125 ns with a laser radiation power density of 200 mW/cm². Titanium film is then sputtered with magnetron sputtering 100 nm thick, at a deposition rate of 5 nm/s and a platinum film 150 nm thick, at a deposition rate of 10 nm/s, at a pressure of 9*10^-5 Pa, the temperature of the substrate 60 °C, in an argon atmosphere, followed by annealing at a temperature of 800 °C in an atmosphere of hydrogen, within 5 minutes. Then electrodes of a drain, a source and a shutter on standard technology form.

EFFECT: invention provides a reduction in the value of contact resistance, improved processability and instrument parameters, improved quality and an increase in the yield percentage.

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