METHOD OF MAKING SEMICONDUCTOR DEVICE Russian patent published in 2016 - IPC H01L21/265 

FIELD: electricity.

SUBSTANCE: invention relates to technology for production of semiconductor devices, particularly to production of field-effect transistor with low values of contact resistance. Method of making semiconductor device on a semi-insulating substrate of GaAs comprises forming a thin layer of n-GaAs with thickness of 10-15 nm by sulphur ion implantation at room temperature with a dose of 5*10¹² cm^-2 with energy 30 keV with subsequent high-temperature treatment at temperature of 820-850 °C for 20 minutes. Then, according to standard technology, forming regions of semiconductor device and contacts.

EFFECT: reduced contact resistance values, high technological effectiveness, improved parameters of device, higher quality and output of nondefective products.

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