METHOD OF MAKING A SEMICONDUCTOR DEVICE Russian patent published in 2017 - IPC H01L21/268 

FIELD: technological processes.

SUBSTANCE: invention relates to technology of production of semiconductor devices, particularly to production of amorphous silicon α-Si with low density of defects. Method of making semiconductor device according to the invention includes processes of forming source regions, drain, gate, gate isolation layer and a layer of amorphous silicon, wherein the layer of amorphous silicon is made by photodegradation of disilane molecules with the rate of deposition 5.5 nm/s, at the temperature of 400 °C, pressure 1.33 PA at action of laser beam power 140 MJ/min and disilane flow rate – 20 cm³/min.

EFFECT: invention increases percentage yield of serviceable devices, improving their quality and reliability.

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