METHOD FOR MANUFACTURING A THIN-FILM TRANSISTOR Russian patent published in 2021 - IPC H01L21/336 

FIELD: physics.

SUBSTANCE: invention relates to the field of technology for the production of semiconductor devices, in particular to the technology of manufacturing a thin-film transistor with a reduced value of leakage currents. A method for manufacturing a thin-film transistor includes the processes of forming areas of drain, source, gate, gate oxide, amorphous silicon film on a glass substrate. According to the invention, a film of amorphous silicon a-Si:H is formed by deposition in an HF discharge with decomposition in a glow discharge of disilane dissolved in helium at a ratio He/Si₂H₆=9/1 on a glass substrate at a gas pressure of 130 Pa, HF power of 8 W, at frequency of 13.56 MHz and a substrate temperature of 280°C, with a gas flow rate of 200 cm³/min and a film deposition rate of 1.2 nm/s.

EFFECT: invention makes it possible to manufacture a thin-film transistor with a reduced value of leakage currents.

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