METHOD FOR MANUFACTURING OF SEMICONDUCTOR DEVICE Russian patent published in 2024 - IPC H01L21/20 

FIELD: production of semiconductor devices.

SUBSTANCE: method for manufacturing semiconductor devices includes the processes of forming the active regions of a field-effect transistor and electrodes for them, a gate oxide, a layer of amorphous silicon is formed by photodecomposition of Si₂H ₆ disilane molecules under the influence of an excimer laser beam with an energy of 140 mJ/pulse, pressure in the reaction chamber of 2.66⋅10^-5 Pa, deposition rate from the gas phase of a layer of amorphous silicon 3.5 nm/s at a disilane Si₂H₆ consumption of 20 cm³/min, substrate temperature 400 °C and subsequent heat treatment at a temperature of 550 °C for 30 minutes, in an argon atmosphere.

EFFECT: providing the ability to reduce defects, improve manufacturability, improve device parameters, improve quality and increase the percentage of usable devices.

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