THERMAL MICRO SYSTEM ON THE SEMICONDUCTOR BASIS Russian patent published in 2018 - IPC G01P5/10 G01K13/02 

FIELD: measuring devices.

SUBSTANCE: invention relates to measurement equipment and can be used for measuring temperature of heated body, chemically aggressive and abrasive gases. Device is proposed in the form of a thermal microsystem made of a semiconductor material and consisting of a platform of a circular shape and a leg connected to it, containing at least one through-hole. Surface of the circular platform on both sides within the perimeter contains an electroconductive layer, which includes atoms Ni, Au, Ta, W, Al, Ti, Sb, Nb, Pt, Cr, Hf, Mo, Zr with external electrical terminals and a guard ring in the form of a mesoplane structure. Surface of the circular platform on both sides within the perimeter contains an electroconductive layer, which includes atoms Ni, Au, Ta, W, Al, Ti, Sb, Nb, Pt, Cr, Hf, Mo, Zr with external electrical terminals and a guard ring in the form of a mesoplane structure. In addition, the thermal microsystem can contain electrical switching elements.

EFFECT: technical result is the increase of the accuracy and reliability of the obtained results.

1 cl, 2 dwg