POWER SEMICONDUCTOR MODULE HALF-BRIDGE SUB-MODULE Russian patent published in 2018 - IPC H01L25/00 

FIELD: electrical equipment.

SUBSTANCE: invention relates to power semiconductor modules and can be used in converting equipment. Power semiconductor module half-bridge submodule containing an electrically insulating heat-conducting substrate with a current-carrying layer having power polygons: first DC+ and AC, on which power semiconductor elements parallel rows are located, forming the half-bridge arms; half bridge three maximum possible wide strip power outputs, located in parallel to the semiconductor elements rows, wherein the submodule AC output being connected to the AC polygon along its entire width, and the submodule DC+ and DC- terminals are located at a distance from each other, equal to the necessary insulation thickness, characterized in that it contains an additional substrate with a current conducting layer located on the AC polygon along and between the power semiconductor elements rows, wherein the current conducting layer is divided into the power polygons: second DC+ and DC- so, that the DC- polygon is located along and in close proximity to the half bridge lower arm power semiconductor elements row, to the polygons: second DC+ and DC- on their entire width are connected the submodule corresponding power outputs DC+ and DC-, the submodule AC output the is connected to the AC polygon outside the submodule crystals rows, and necessary for the formation of half bridge circuit connections between the polygons and (or) semiconductor elements are made by flexible current conductors, which width ensures their maximum coverage of the submodule current conductors width.

EFFECT: invention allows to reduce the voltage ejections on the power semiconductor module half-bridge submodule power semiconductor elements, occurring due to presence of the parasitic inductances in the half-bridge submodule current conductors.

1 cl, 1 dwg