POWER SEMICONDUCTOR MODULE HALF-BRIDGE SUB-MODULE Russian patent published in 2019 - IPC H01L25/00 

FIELD: electrical equipment.

SUBSTANCE: invention relates to power semiconductor modules and can be used in converting equipment. Essence of the invention lies in the fact that the submodule of a half-bridge power semiconductor module contains an electrically insulating heat-conducting substrate with two current-carrying layers: a lower layer that is made up of a solid power polygon and is part of one of the DC-current conductors, and the upper layer, which is divided into power polygons AC and DC+, which are parallel rows of power semiconductor elements, forming the shoulders of the half bridge; two power polygons electrically connected to the lower power current-carrying layer and located along said polygons, the polygons AC and DC+ on which parallel rows of power semiconductor elements are located in close proximity to each other; the two mentioned power polygons electrically connected to the lower power current-carrying layer are located outside the rows of the crystals of the submodule; the output of the AC of the submodule is connected to the AC polygon between the rows of power semiconductor elements; and necessary for the formation of half bridge circuit connections between the polygons and (or) semiconductor elements are made by flexible current conductors, which width ensures their maximum coverage of the submodule current conductors width.

EFFECT: increased reliability of the semiconductor power module.

1 cl, 1 dwg