TRANSISTOR HALF-BRIDGE MODULE Russian patent published in 2024 - IPC H02M7/5387 

FIELD: electronics.

SUBSTANCE: invention relates to power electronics and can be used in transmitting channels of sound and ultrasonic ranges when designing amplifying devices for process and hydroacoustic systems, when designing power supplies. Disclosed is a transistor half-bridge module containing four discrete silicon carbide transistors with their own fast reverse diodes (Q1, Q2, Q3, Q4), having a short reverse recovery time, distributed capacitance filter (C7), connected between drains of upper (Q1, Q3) and sources of lower (Q2, Q4) transistors, and RC circuit (C1, R1-R4, C2 R5-R8 – upper board, R9-R16, C3-C6 – lower board) in control circuits of each of four transistors.

EFFECT: this configuration made it possible to realize a transistor half-bridge module with higher efficiency, due to parallel connection of transistors with a lower open channel resistance and rejection of diode decoupling diodes, which were a source of additional losses, improved electromagnetic compatibility, due to reduction of parasitic capacitance between current-carrying parts of lower board and heat-removing base, increased resistance to influence of parasitic inductances of devices, in which it will be used, due to use of internal capacitive filter and internal RC circuits in transistor control circuits and possibility to repair module due to application of discrete package transistors.

1 cl, 5 dwg