SEMICONDUCTOR DEVICE MANUFACTURING METHOD Russian patent published in 2019 - IPC H01L21/265 

FIELD: physics.

SUBSTANCE: invention relates to production of semiconductor devices, particularly to formation of silicide layers with low resistance. Method of making a semiconductor device is carried out by forming a silicide ion bombardment of argon ions with dose of 4*10¹⁵ cm^-2, 300 keV energy into the silicon substrate through a nickel film with thickness of 40–45 nm on its surface obtained during sputtering at pressure of 9*10^-5 Pa, with a deposition rate of 1 nm/s, followed by annealing for 3 min in a stream of nitrogen at temperature of 350 °C.

EFFECT: invention provides reduced resistance, improved parameters of devices, high quality and high percentage yield.

1 cl, 1 tbl