SEMICONDUCTOR DEVICE MANUFACTURING METHOD Russian patent published in 2022 - IPC H01L21/265 H01L21/268 

FIELD: electrical engineering.

SUBSTANCE: invention relates to production of semiconductor devices, in particular, to the technology of making field-effect transistors with low substrate current and high resistance to hot carriers. Method consists in the following: active high-alloyed n⁺ source-drain regions are formed using layers of protective SiO₂ and Si₃N₄ as a mask, implantation of arsenic ions As⁺ with energy of 60 keV, concentration of dopant (1–2)⋅10²⁰ cm^-3, and then after removal of Si₃N₄ mask by implantation of phosphorus ions P⁺ with energy of 30 keV, dopant concentration (1–3)⋅10¹⁵ cm^-3 form low-doped n^- source-drain regions located between n⁺ source and drain regions. Then, laser annealing is performed with radiation wavelength 1.06 mcm, pulse duration 50 ns, pulse energy 3–5 J/cm², in a nitrogen atmosphere, with a scanning rate of 12.5 cm/s, at temperature of 150 °C. Layers of SiO₂ and Si₃N₄ were formed by standard technology.

EFFECT: creation of lightly doped n^- drain regions reduces the value of the electric field in the channel of the transistor and the value of the substrate current, higher resistance to hot media, because the substrate current is an indicator of hot carrier generation efficiency.

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