DEVICE FOR ETCHING SEMICONDUCTOR STRUCTURES Russian patent published in 2019 - IPC H01L21/3065 

FIELD: physics.

SUBSTANCE: invention relates to equipment for the manufacture of integrated circuits of micromechanical and optoelectronic devices. Essence of the invention lies in the fact that at least one additional nozzle 5 with the longitudinal axis O3-O4 is inserted into the device, the axes O3-O4 of the nozzles 5 are located at angles λ, in the range of 20–80° to surface A of platform 1, moreover, the O1-O2 axis and the O3-O4 axis of the nozzles 5 do not intersect, and the projections of the O3-O4 axes in the plane of the surface A of the platform 1 are angles β with axes passing through the center of the platform 1 O and the centers of the bases 13 nozzles 5, at the same time, the O3-O4 axes, on the sides opposite to the bases 13, are directed tangentially to the generators B of the table 3 and can deviate from this direction in the range of +/-20°.

EFFECT: increasing the degree of ionization of the components of the gas mixture due to the vortex movement in a spiral of gas flows inside the cap.

4 cl, 4 dwg