METHOD OF CREATING A BILATERAL TOPOLOGICAL PATTERN IN METALLIZATION ON SUBSTRATES WITH THROUGH METALLIZED MICRO-HOLES Russian patent published in 2018 - IPC H01L21/308 

Abstract RU 2671543 C1

FIELD: technological processes.

SUBSTANCE: when forming a topological pattern by lithography for applying and drying the resist, the substrate is initially dipped into a resist, followed by drying successively at a temperature lower than the drying temperature of the resist and the drying temperature of the resist and removing the resist. Then the resist is sprayed with a spray method first to one side of the substrate, followed by drying, and then similarly to its other side. Size of the resist drops applied by the spray method is dd<<dhol, where dd – diameter of the drop of resist, dhol – diameter of the through-hole micro-opening.

EFFECT: method of creating a two-sided topological pattern of metallization is proposed to increase the manufacturability and reproducibility in the formation of a bilateral topological pattern in metallization on substrates with through metallized micro-holes.

1 cl, 3 dwg, 2 tbl

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RU 2 671 543 C1

Authors

Zhukov Andrej Aleksandrovich

Zapetlyaev Valentin Mikhajlovich

Dates

2018-11-01Published

2017-06-26Filed