SWITCHING BOARD ON ALUMINUM NITRIDE FOR POWER AND HIGH-POWER MICROWAVE SEMICONDUCTOR DEVICES, MOUNTED ON THE BASE OF THE DEVICE HOUSING Russian patent published in 2019 - IPC H01L21/34 

FIELD: electrical engineering.

SUBSTANCE: invention can be used for high-power power and microwave semiconductor devices. Essence of the invention consists in that the switching board comprises a plate of aluminum nitride with through holes formed by laser micro processing, metallized holes and a metal topological pattern from a system of metals with thickness of 3 to 300 mcm with a protective layer of chemical nickel and gold, formed by vacuum sputtering methods, galvanic deposition, etching through a film photoresist, wherein the switching board has a thick double-sided metallization of up to 300 mcm, a solder mask with windows, two-sided solder layer in solder mask open openings and an additional solder layer in places of attachment of powerful suspension elements and assembly of the board to the housing of the device housing, in combination with metallized holes, heat removal into the board and from the board into the housing, and metallized holes make installation of high density due to two-level layout of metal topological pattern.

EFFECT: enabling improvement of heat removal from radio elements and current-conducting paths located on the switching board.

1 cl, 1 dwg