FIELD: power engineering.
SUBSTANCE: method of making a photoelectric converter includes successively forming a photosensitive semiconductor heterostructure A3B5 with a passivating layer and a contact layer of GaAs, removal of contact layer above photo receiving sections of semiconductor heterostructure by chemical etching through first photoresistive mask, treatment of open surfaces of passivating layer by ion-beam etching, depositing the antireflection coating, removing the first photoresist mask and the portions of the dielectric antireflection coating lying thereon, formation of rear ohmic contact and formation of frontal ohmic contact through at least one second photoresist mask containing sublayer of antireflection coating.
EFFECT: photoelectric converter has reduced optical loss.
4 cl, 4 ex, 7 dwg
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Authors
Dates
2019-05-14—Published
2018-05-30—Filed