INFRARED LED Russian patent published in 2023 - IPC H01L33/10 H01L33/30 

FIELD: electronic engineering; semiconductor devices.

SUBSTANCE: infrared LED includes a light-extracting layer (1), an active region (3) made on the basis of several InGaAs quantum wells, surrounded by wide-gap barrier layers (2, 4), a Bragg reflector (5), a reflective layer (6) made of AlGaAs with AlAs content higher than 75%, AlGaAs contact layer (7) with a band gap equal to the generated radiation quantum energy, connected to a silver mirror (10) by a matrix of cylindrical metal contacts (8). Between the cylindrical metal contacts (8) a dielectric layer (9) is made with a thickness equal to the thickness of the cylindrical metal contacts (8).

EFFECT: infrared LED according to the invention has an increased external quantum efficiency of 35-37%.

5 cl, 3 ex, 2 dwg