METHOD OF FORMING HEXAGONAL SILICON PHASE BY IMPLANTING KRYPTON IONS IN A FILM OF SILICON OXIDE ON A MONOCRYSTALLINE SILICON WAFER Russian patent published in 2019 - IPC H01L21/265 

FIELD: electrical engineering.

SUBSTANCE: invention relates to semiconductor technology and can be used in making light-emitting devices based on hexagonal silicon phase, which provides efficient excitation of photoluminescence. In method of forming phase of hexagonal silicon, involving obtaining on the surface of a plate made from diamond-like monocrystalline silicon, a silicon oxide film, implanting therein ions having an atomic radius greater than the atomic radii of the elements which make up the composition of said film and causing high mechanical stresses in said film and abutting subsurface layer of the plate, sufficient for converting the diamond-like phase of monocrystalline silicon into its hexagonal phase, and post-implantation annealing, krypton ions are implanted into said silicon oxide film, wherein thickness of the obtained silicon oxide film and energy and dose of krypton ions is selected from intervals of thickness of the silicon oxide film from 50 to 150 nm, energy of krypton ions from 40 to 80 keV and dose of krypton ions from 1⋅10¹⁶ up to 1⋅10¹⁷ cm^-2 provided that maximum concentration of krypton ions in silicon oxide film at depth of 40–60 % of thickness of said film.

EFFECT: technical result from use of the proposed method of forming a hexagonal phase of silicon – high efficiency of forming said phase by increasing the manufacturability of said formation as a result of simplification thereof.

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