METHOD OF FORMING LAYER OF HEXAGONAL SILICON PHASE Russian patent published in 2024 - IPC H01L21/20 

FIELD: semiconductor technology.

SUBSTANCE: invention can be used in making light-emitting devices based on hexagonal silicon phase, which provides efficient excitation of photoluminescence. Method of forming a layer of a hexagonal silicon phase on a silicon wafer includes the following steps: formation of a layer of polycrystalline silicon on the surface of a monocrystalline silicon plate using a molecular-beam epitaxy method, with successive formation of a silicon layer and a germanium layer in one growth system, with further annealing of the obtained structure at a temperature of not lower than 600 °C, wherein solid layers of hexagonal silicon phase of structural type 9R are formed.

EFFECT: invention provides stable formation of a solid layer of hexagonal silicon on the surface of diamond-like monocrystalline silicon, wherein the layer is uniform in thickness—the spread of the layer thickness does not exceed 10%.

1 cl, 1 dwg