METHOD FOR GROWTH OF EPITAXIAL LAYERS OF SILICON CARBIDE OF P-TYPE CONDUCTIVITY WITH LOW DENSITY OF BASAL DISLOCATIONS Russian patent published in 2020 - IPC H01L21/205 

FIELD: electrical engineering.

SUBSTANCE: invention relates to semiconductor engineering and can be used in the growth of epitaxial layers of silicon carbide (SiC) with low density of basal dislocations. Method consists in that, as well as in the known method for growth of epitaxial layers SiC the SiC substrate is used, the surface of which is misoriented relative to the crystallographic plane of Miller-Bravais (1120) by more than 0°, but not more than by 8°. Surface of substrate on one side is etched in hydrogen, silane or argon at temperature of not less than 1,450 °C and not more than 1,800 °C and hydrogen pressure of not less than 30 mbar and not more than 500 mbar for not more than 90 minutes, thereafter, a buffer layer of SiC of p-type conductivity with thickness of not less than 1 mcm and not more than 50 mcm is grown on the etched surface of the substrate, on the surface of which an epitaxial layer of SiC of p-type conductivity is grown.

EFFECT: invention ensures production of non-defect layers of silicon carbide.

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