FIELD: technological processes.
SUBSTANCE: invention relates to a method for laser annealing of nonmetallic materials and can be used for processing of semiconductor, ceramic and vitreous materials. Surface is irradiated with a rectangular time-domain laser pulse with the required energy density. Dielectric mirror with a reflection coefficient of 40 %, the initial laser pulse is divided into two pulses and the second pulse is delayed for the first pulse duration. Power density in the first pulse makes 60 % of power density in the initial laser beam.
EFFECT: increased yield of nonmetallic materials during laser annealing due to reduced thermoelastic stresses and potential spalling destruction of material.
1 cl, 3 dwg
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