FIELD: chemistry.
SUBSTANCE: sensor consists of a semiconductor base in the form of a polycrystalline film of a solid solution of (InSb)0.94(CdTe)0.06, which is deposited on the electrode area of a piezoelectric quartz-crystal oscillator.
EFFECT: improved sensitivity, selectivity and manufacturability of the sensor.
3 dwg, 1 tbl
| Title | Year | Author | Number |
|---|---|---|---|
| SOLID STATE NITROGEN DIOXIDE SENSOR | 2021 |
|
RU2774643C1 |
| NITROGEN DIOXIDE SENSOR | 2016 |
|
RU2636411C1 |
| SEMICONDUCTOR NITROGEN DIOXIDE SENSOR | 2020 |
|
RU2750854C1 |
| SEMICONDUCTOR GAS SENSOR OF AMMONIA TRACE IMPURITIES | 2015 |
|
RU2607733C1 |
| SEMICONDUCTOR SENSOR OF CARBON OXIDE | 2016 |
|
RU2637791C1 |
| NITROGEN DIOXIDE INDICATOR | 2004 |
|
RU2274853C1 |
| SEMICONDUCTOR NITROGEN DIOXIDE SENSOR | 2019 |
|
RU2697920C1 |
| NITROGEN DIOXIDE SENSOR | 2020 |
|
RU2745943C1 |
| NITROGEN DIOXIDE GAS ANALYZER | 2019 |
|
RU2724290C1 |
| PIEZO-RESONANCE GAS INDICATOR | 2004 |
|
RU2274854C1 |
