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2 750 854

(13)

(51)

IPC

G01N27/12(2006-01-01)

(21) (22)

Application

2020143090, 2020-12-25

(24)

Start date

2020-12-25

(22)

Actual filing date

2020-12-25

(45)

Published

2021-07-05

(72)

Inventor

Kirovskaya Iraida AlekseevnaKopylova Ekaterina NikolaevnaMironova Elena ValerievnaEkkert Alisa OlegovnaEkkert Robert Vladimirovich

(73)

Holder

Federal State Budgetary Educational Institution Of Higher Education State Technical University"

SEMICONDUCTOR NITROGEN DIOXIDE SENSOR Russian patent published in 2021 - IPC G01N27/12

Abstract RU 2750854 C1

FIELD: sensors.

SUBSTANCE: invention relates to the field of gas analysis, particularly, to semiconductor nitrogen dioxide sensors. The semiconductor nitrogen dioxide sensor is comprised of a semiconductor base applied to a non-conductive substrate, wherein the semiconductor base is made of a polycrystalline film of a solid solution of the composition (InAs)_0.18(CdTe)_0.82.

EFFECT: increased sensitivity of the sensor.

1 cl, 2 dwg, 1 tbl

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RU 2 750 854 C1

Authors

Kirovskaya Iraida Alekseevna

Kopylova Ekaterina Nikolaevna

Mironova Elena Valerievna

Ekkert Alisa Olegovna

Ekkert Robert Vladimirovich

Dates

2021-07-05—Published

2020-12-25—Filed