NITROGEN DIOXIDE GAS ANALYZER Russian patent published in 2020 - IPC G01N27/12 

Abstract RU 2724290 C1

FIELD: measurement.

SUBSTANCE: invention relates to gas analysis, in particular to detecting devices used for recording and measuring content of nitrogen impurities. Semiconductor sensor of nitrogen dioxide containing a semiconductor base applied on a non-conducting substrate differs by the fact that the semiconductor base is made of polycrystalline film of the solid solution (InAs)0.015(ZnS)0.985.

EFFECT: high sensitivity and manufacturability of the sensor.

1 cl, 2 dwg, 1 tbl

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RU 2 724 290 C1

Authors

Kirovskaya Iraida Alekseevna

Mironova Elena Valerevna

Umanskij Ilya Yurevich

Ekkert Alisa Olegovna

Ekkert Robert Vladimirovich

Dates

2020-06-22Published

2019-12-27Filed