FIELD: technological processes.
SUBSTANCE: sputtered magnetron unit for deposition of TixW1-xO3 solid films relates to devices used in electronics, optoelectronics, architecture, automotive industry, etc. Spraying magnetron unit for deposition of film in form of TixW1-xO3 solid solution with a stoichiometric coefficient in range of 0.01<x<0.05 contains a target placed in a reactive medium consisting of plasma-forming argon and oxygen gas. Target is made of two metal plates located on same axis with magnetron parallel to each other and rigidly attached to it. Inner plate is cooled and made of titanium, while outer plate is made of tungsten, wherein in its erosion zone there are slots arranged symmetrically relative to its centre.
EFFECT: higher energy efficiency of reactive magnetron sputtering due to control of chemical composition of TixW1-xO3 film by variation of total area of slots and discharge current.
1 cl, 3 dwg
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