FIELD: physics.
SUBSTANCE: invention relates to solar cells (SE) with HIT structure based on crystalline silicon. Photoconverter with HIT structure based on crystalline silicon with α-Si – c-Si heterojunctions with thin inner i-layer from α-Si comprises emitter – α-Si (p+), base – c-Si (n), diffraction grating, rear potential barrier – α-Si (n+) and current-collecting contacts. Layers α-Si (i) and α-Si (p+) are deposited on a diffraction "grid" formed on the frontal surface of crystalline silicon and having a wave-like relief.
EFFECT: reducing the thickness of a photoelectric converter with a HIT structure by several times compared to known elements without reducing the conversion efficiency owing to strong deviation of long-wave quanta entering the crystal and as a result of narrowing the region of generation of current carriers to the frontal surface of the crystal.
3 cl, 3 dwg
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