FIELD: electronic equipment.
SUBSTANCE: invention relates to electronic engineering, specifically to semiconductor multi-junction photoelectric converters of powerful optical radiation with connecting tunnel diodes. Semiconductor structure of the multi-junction photoelectric converter comprises upper substructure (1), lower substructure (2) made, for example, of GaAs, which are interconnected by tunnel diode (3). Tunnel diode (3) comprises: heavily-alloyed p-type conductive layer (4) of AlGaAs, undoped layer (5) of GaAs with intrinsic conductivity of thickness 1–3 nm, heavily doped layer (6) of n-type conductivity of GaAs and layer (7) of n-type conductivity from AlGaAs.
EFFECT: semiconductor structure of multi-junction photo converter has high density of peak tunnel current.
6 cl, 2 dwg
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