FIELD: electronic engineering.
SUBSTANCE: invention relates to electronic engineering, in particular to microelectronics, and can be used in the manufacture of integrated circuit (IC) crystals and discrete semiconductor devices, which are a thin plate. Method for temporary bonding of plates for forming thin plates includes applying an adhesive layer to a working plate, applying an anti-adhesive layer to a carrier plate, thermocompressive connection of two plates, grinding or polishing the treated surface of the working plate, mechanical separation of the working plate and the carrier plate, cleaning the surface of the working plate organic solvent, while the process of drying the adhesive and anti-adhesive layer is performed in the process of joining two plates, the maximum heating temperature of the plates cannot be less than the transition temperature of the adhesive and anti-adhesive layers to the solid state, and is selected depending on the temperature coefficient of linear expansion of the materials according to the proposed ratio.
EFFECT: integrated circuit crystals manufacture method improvement.
1 cl, 5 dwg, 1 ex
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Authors
Dates
2022-05-25—Published
2021-09-24—Filed