FIELD: electrical engineering.
SUBSTANCE: invention can be used for production of high-integration semiconductor devices. Substance of invention consists in fact that in reactor of plasma treatment of semiconductor structures containing vacuum chamber with gas supply system and pumping system, substrate holder installed in area of base of vacuum chamber and connected to displacement unit HF, plasma generation system including a gas distributor and a plasma generator interconnected by connecting modules, each connecting module includes a thermomechanical stress compensation module installed between the gas distributor and the plasma generator.
EFFECT: improving reliability of the reactor.
6 cl, 4 dwg
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