DEVICE FOR PLASMA PROCESSING OF SEMICONDUCTOR STRUCTURES Russian patent published in 2020 - IPC H01L21/3065 

FIELD: nanotechnology; physics.

SUBSTANCE: invention relates to nanotechnology and semiconductor production and can be used in various technological processes for manufacturing semiconductor devices of high degree of integration by application and etching of functional materials, including conductors, semiconductors and dielectrics on substrates of various semiconductors, for example, silicon, germanium, A3B5, silicon carbide, gallium nitride, sapphire. Essence of the invention consists in the fact that in the device for plasma treatment of semiconductor structures containing a vacuum chamber with a gas supply system and a pumping system, a substrate holder installed in the area of the base of the vacuum chamber and connected to the HF offset unit, plasma generation system consisting of a thermal stabilization module with a heat exchange unit and a gas flow forming module, comprising a gas distributor and a plasma generator with an array of nozzles, each nozzle includes a first hole with a bottom, coupled with a second hole of smaller diameter, lying towards the substrate holder, in each nozzle a plug is installed, made in form of a first cylindrical module, comprising end connected to second cylindrical module with diameter smaller than diameter of first cylindrical module, wherein the first cylindrical module is installed in the first hole with the first gap and the second cylindrical module is installed in the second hole with the second gap.

EFFECT: technical result is higher reliability of device.

4 cl, 2 dwg