METHOD FOR DEPOSITION FROM GAS PHASE BY DECOMPOSITION OF ORGANOMETALLIC COMPOUNDS USING ALKYLIDIUM COMPOUNDS IN FORM OF SOLUTIONS THEREOF IN HYDROCARBONS Russian patent published in 2020 - IPC C23C16/448 

FIELD: chemistry.

SUBSTANCE: invention relates to a method of producing an indium-containing layer by deposition from a gas phase by decomposition of organometallic compounds. Indium-containing layer is formed on a substrate in a reaction chamber, into which indium is fed in the form of an indium-containing precursor compound of formula InR₃, in which the residues R are independently selected from alkyl residues with 1–6 carbon atoms. Indium-containing precursor compound is used in a solution containing a solvent and an indium-containing precursor compound dissolved therein, wherein the solvent contains at least one hydrocarbon with 1–8 carbon atoms. Said solution is used to obtain indium-containing layer by deposition from gas phase by decomposition of organometallic compounds.

EFFECT: possibility of obtaining high concentration and high mass flow rate of indium or a precursor compound thereof in gas phase and in a reaction chamber.

13 cl, 4 dwg, 1 tbl, 1 ex