METHOD OF PRODUCING SURFACE-BARRIER DETECTORS ON SILICON OF N-TYPE CONDUCTIVITY Russian patent published in 2020 - IPC H01L21/329 

FIELD: electrical engineering.

SUBSTANCE: invention relates to the field of Schottky diodes manufacturing technology, which also includes nuclear radiation detectors, in particular, surface-barrier detectors. Method of making surface-barrier detectors on n-type conductivity silicon involves chemical etching of the silicon wafer, heating in air after etching, protection of the transition edge with a dielectric coating, thermal spraying of the rectifying contact. Organic compound of nucleophilic type containing nitrogen is added to composition of dielectric coating.

EFFECT: reduced value of reverse currents, improved type of current-voltage characteristics, elimination of excessive noise, which increases output of suitable detectors.

4 cl, 4 dwg, 1 tbl