METHOD FOR MANUFACTURING SURFACE-BARRIER DETECTORS BASED ON N-TYPE CONDUCTIVITY SILICON Russian patent published in 2022 - IPC H01L21/329 

FIELD: semiconductor industry.

SUBSTANCE: present invention relates to the technology of manufacturing semiconductor diode structures with a Schottky barrier. The method for manufacturing a surface-barrier detector based on n-type conductivity silicon includes chemical etching of a silicon plate, heating in air after etching, protection of the transition edge with a dielectric coating, as which an organic silicon compound of the KEN-2 brand is used with the addition of pyridine in a weight ratio of 20-25:1, respectively, and a micro- or nanopowder of graphite in a weight ratio of 10-15:1, respectively, and thermal spraying of the rectifying contact.

EFFECT: invention provides an improvement in reverse current-voltage curves by repeatedly reducing the leakage currents of diodes and achieving their values comparable to the reverse currents obtained in the framework of planar technology.

1 cl, 3 dwg