SUPER-FINE JUNCTIONS MANUFACTURING METHOD Russian patent published in 2020 - IPC H01L21/265 

FIELD: physics.

SUBSTANCE: invention relates to production of semiconductor devices, particularly, to manufacturing of junctions with low leakage currents. Technology of the method consists in the following: on silicon plates with orientation of (100), according to standard technology, thermal oxide layer is grown 200 nm, contacts are formed, and after annealing at temperature 300 °C for 9 minutes implanted Ga ions with energy 15 keV, dose 4*10¹³-3*10¹⁵ cm^-2, at current 300 nA. Structure is then annealed at 700 °C for 30 s under nitrogen atmosphere.

EFFECT: technical result is enabling reduction of leaks currents, improvement of quality and parameters of instruments, increase of yield percentage.

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