METHOD FOR MANUFACTURING SHALLOW JUNCTIONS Russian patent published in 2021 - IPC H01L21/265 

FIELD: semiconductor industry.

SUBSTANCE: invention relates to the field of technology for the production of semiconductor devices, in particular to the technology for the manufacture of small-scale transitions with a reduced value of leakage currents. The technology of the method is as follows: a layer of Ti 110 nm is applied on p-type silicon plates with a resistivity of 4.5 Ohm*cm, then heat treatment is carried out at a temperature of 950°С for 35 seconds in a nitrogen atmosphere to form silicide, then the silicide layer is doped with boron ions by implantation with an energy of 50 keV, a dose of 7.5*10¹⁵ cm^-2 and heat treatment at a temperature of 900°С for 20 seconds, in a nitrogen atmosphere. During heat treatment, impurities are diffused from the doped silicide layer, resulting in a transition with a depth of 80 nm.

EFFECT: reducing leakage currents, ensuring manufacturability, improving the parameters of devices, improving quality and increasing the percentage of yield ratio.

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