COMPOSITION AND METHOD FOR PRODUCING PICOCRYSTALLINE ARTIFICIAL BORANE ATOMS Russian patent published in 2021 - IPC C01B35/00 C01B6/10 C01B33/20 C23C16/38 C23C16/40 

FIELD: electronic and semiconductor devices.

SUBSTANCE: invention can be used in the manufacture of materials for electronic and semiconductor devices. The solid compound formed by self-assembly is a picocrystalline artificial borane atom, which contains boron 102 and hydrogen 103 atoms, has the composition (B₁₂H_w)_xSi_yO_z, where 0 <w≤5, 2≤x≤4, 2≤y≤5.0 ≤z≤3, and may additionally contain a trace of a coin metal such as gold. The atomic concentration of boron, present substantially in the form of icosahedron 101, is 63-89%. The ratio of isotopes ¹¹₅B and ¹⁰₅B is less than that naturally occurring. The specified compound is obtained by chemical vapor deposition on a heated substrate containing monocrystalline silicon at a temperature of 200-350°C and a pressure of 1-30 torr in a closed chamber, into which a gas mixture containing hydrogen, boron, silicon and optionally oxygen is introduced in a controlled manner. Hydration is minimized by isolating the closed chamber from ambient moisture. Oxygen gas is introduced into the chamber at a controlled time change to form a composition with oxygen-free and oxygen-free regions. The composition can be formed as a multilayer film comprising an oxygen-free first layer and an oxygen-containing second layer. Boron icosahedra are obtained with an almost symmetric nuclear configuration that can replace silicon atoms in a structure exhibiting short-range and long-range order, as determined by X-ray diffraction of real samples, and are compatible with it.

EFFECT: invention is used in the manufacture of materials for electronic and semiconductor devices.

32 cl, 84 dwg, 14 ex