METHOD OF INCOMING INSPECTION OF MONOCRYSTALLINE SILICON WAFERS Russian patent published in 2021 - IPC H01L21/66 G01N21/35 

FIELD: power semiconductor devices production.

SUBSTANCE: invention relates to a method of incoming inspection of monocrystalline silicon wafers. The method includes irradiating the plates with infrared radiation, determining the transmittance, establishing a correlation between the transmittance and the number of suitable plates, and evaluating the suitability of the plates by this characteristic. To cut off the energy of the infrared radiation source in the excitation band of normal vibrations of the silicon crystal lattice and in the ionization region of impurities, corrective light filters are installed in it between the infrared radiation source and the silicon plate, and the transmittance is measured in the transparency band of polished silicon wafers in the wavelength range 5.5-30.0 microns.

EFFECT: providing possibility of fast and non-destructive quality control of polished monocrystalline silicon wafers used in the manufacture of power semiconductor devices.

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